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ar c hive inf o rmati o n archive information 1 mrf6404 motorola rf device data the rf line the mrf6404 is designed for 26 volts microw ave large signal, common emitter, class ab linear amplifier app lications operating in the range 1.8 to 2.0 ghz. ? specified 26 volts, 1.88 ghz characteristics output power 30 watts gain 7.5 db min @ 30 watts efficiency 38% min @ 30 watts ? characterized with series equivalent largeCsignal parameters from 1.8 to 2.0 ghz ? to be used in class ab for dcs1800 and pcs1900/cellular radio ? gold metallized, emitter ballasted for long life and resistance to metal migration maximum ratings rating symbol value unit collectorCemitter voltage v ceo 24 vdc collectorCemitter voltage v ces 60 vdc emitterCbase voltage v ebo 4 vdc collectorCcurrent continuous i c 10 adc total device dissipation @ t c = 25 c derate above 25 c p d 125 0.71 watts w/ c storage temperature range t stg C65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case (1) r jc 1.4 c/w electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectorCemitter breakdown voltage (i c = 50 ma, i b = 0) v (br)ceo 24 29 vdc emitterCbase breakdown voltage (i e = 10 madc) v (br)ebo 4 5 vdc collectorCbase breakdown voltage (i c = 50 madc) v (br)ces 60 68 vdc collectorCbase breakdown voltage (i c = 50 madc, r be = 75 ? ) v (br)cer 40 56 vdc collector cutoff current (v ce = 30 v, v be = 0) i ces 10 ma on characteristics dc current gain (i c = 1 adc, v ce = 5 vdc) h fe 20 50 120 (1) thermal resistance is determined under specified rf operating condition. order this document by mrf6404/d semiconductor technical data 30 w, 1.88 ghz rf power transistor npn silicon case 395cC01, style 1 ? motorola, inc. 1996 rev 3
ar c hive inf o rmati o n archive information mrf6404 2 motorola rf device data electrical characteristics continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit dynamic characteristics output capacitance (v cb = 26 v, i e = 0, f = 1 mhz) for information only. this part is collector matched. c ob 30 38 pf functional tests commonCemitter amplifier power gain (v cc = 26 v, p out = 30 w, i cq = 150 ma, f = 1.88 ghz) g pe 7.5 8.5 db commonCemitter amplifier power gain (v cc = 26 v, p out = 28 w, i cq = 150 ma) (f = 1.99 ghz) g pe 7 8 db collector efficiency (v cc = 26 v, p out = 30 w, f = 1.88 ghz) (v cc = 26 v, p out = 28 w, f = 1.99 ghz) 38 35 43 40 % output power at 1 dbc (v cc = 26 v, f = 1.88 ghz) (v cc = 26 v, f = 1.99 ghz) p 1dbc 30 28 35 33 watts output mismatch stress: vswr = 3:1 (all phase angles) (v cc = 26 vdc, p out = 25 w, i cq = 150 ma, f = 1.88 ghz) no degradation in output power f (ghz) z in ( ? ) z ol * ( ? ) 1.8 1.85 1.9 4.3 + j6.1 4.8 + j5.0 4.6 + j5.3 2.7 C j1.0 2.9 + j0.3 3.0 + j1.2 z ol *: conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency. figure 1. input and output impedances with circuit tuned for maximum gain @ v cc = 26 v, i cq = 150 ma, p out = 30 w ? dcs evaluation
ar c hive inf o rmati o n archive information 3 mrf6404 motorola rf device data typical characteristics figure 2. output power versus input power figure 3. output power versus frequency figure 4. intermodulation versus output power figure 5. am/pm conversion
ar c hive inf o rmati o n archive information mrf6404 4 motorola rf device data all electrical lengths are referenced from g @ f = 1.9 ghz z1 : 50 ? 1 : 10 z2 : 50 ? 2 : 74.5 b : 16.5 z4 : 74 ? 4 : 68 z5 : 12.8 ? 5 : 21 z6 : 10.4 ? 6 : 49.5 z7 : 18 ? 7 : 36.5 z8 : 45 ? 8 : 20 z10 : 50 ? 10 : 10 z11 : 74 ? 11 : 74.5 z12 : 50 ? 12 : 10 figure 6. 1.80C1.88 ghz test circuit electrical schematic and components list base bias circuit c12, c13 15 nf, chip capacitor, vitramon (0805 a153 jxb) p1 1 k ? , trimmer r3 47 ? , chip resistor, 0805 r4 330 ? , chip resistor, 0805 t1,t2 motorola mjd 31c decoupling base bias circuit c4 68 pf, chip capacitor, atc 100a c5, c9 330 pf, chip capacitor, vitramon (0805 a331 jxb) c7, c11 4.7 f, 63 v, electrolytic capacitor c8 68 pf, chip capacitor, atc 100a c10 15 nf, chip capacitor, vitramon (0805 a153 jxb) r1 1.5 ? , chip resistor, 0805 r2 56 ? , chip resistor, 1206 rf circuit c1, c2 68 pf, chip capacitor, atc 100a c20, c21 1.3 pf, chip capacitor, atc 100a ct2 trimmer capacitor, gigatrim, ref 37281 ct3 trimmer capacitor, gigatrim, ref 37291 trf1 mrf6404 pc board material: r = 2.55, h = 0.508 mm, t = 0.035 mm
ar c hive inf o rmati o n archive information 5 mrf6404 motorola rf device data figure 7. 1.80C1.88 ghz pcn test circuit photomaster ? (not to scale) figure 8. 1.80C1.88 ghz pcn test circuit components layout a a a a a a a a a
ar c hive inf o rmati o n archive information mrf6404 6 motorola rf device data f (ghz) z in ( ? ) z ol * ( ? ) 1.90 1.93 1.97 4.9 + j3.0 5.6 + j1.4 5.4 + j2.5 3.2 + j0.5 3.3 + j1.2 3.4 + j1.5 z ol *: conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency. figure 9. input and output impedances with circuit tuned for maximum gain @ v cc = 26 v, i cq = 150 ma, p out = 28 w 2.00 5.4 C j0.2 3.6 + j2.5 ? pcs evaluation
ar c hive inf o rmati o n archive information 7 mrf6404 motorola rf device data typical characteristics figure 10. output power versus input power figure 11. output power versus frequency figure 12. output power and efficiency versus input power figure 13. output power and efficiency versus input power figure 14. output power versus frequency
ar c hive inf o rmati o n archive information mrf6404 8 motorola rf device data all electrical lengths are referenced from g @ f = 1.9 ghz z1 : 50 ? 1 : 10 z2 : 50 ? 2 : 74.5 b : 16.5 z4 : 74 ? 4 : 68 z5 : 12.8 ? 5 : 21 z6 : 10.4 ? 6 : 49.5 z7 : 18 ? 7 : 36.5 z8 : 45 ? 8 : 20 z10 : 50 ? 10 : 10 z11 : 74 ? 11 : 60 z12 : 50 ? 12 : 10 base bias circuit c12, c13 15 nf, chip capacitor, vitramon (0805 a153 jxb) p1 1 k ? , trimmer r3 47 ? , chip resistor, 0805 r4 330 ? , chip resistor, 0805 t1,t2 motorola mjd 31c decoupling base bias circuit c4 68 pf, chip capacitor, atc 100a c5, c9 330 pf, chip capacitor, vitramon (0805 a331 jxb) c7, c11 4.7 f, 63 v, electrolytic capacitor c8 68 pf, chip capacitor, atc 100a c10 15 nf, chip capacitor, vitramon (0805 a153 jxb) r1 1.2 ? , chip resistor, 0805 r2 56 ? , chip resistor, 1206 rf circuit c1, c2 68 pf, chip capacitor, atc 100a c20, c21 1.3 pf, chip capacitor, atc 100a ct1, ct2 trimmer capacitor, gigatrim, ref 37271 trf1 mrf6404 pc board material: r = 2.55, h = 0.508 mm, t = 0.035 mm figure 15. 1.9C2.0 ghz test circuit electrical schematic and components list
ar c hive inf o rmati o n archive information 9 mrf6404 motorola rf device data figure 16. 1.9C2.0 ghz test circuit photomaster figure 17. 1.9C2.0 ghz test circuit components layout a a a ? (not to scale)
mrf6404 10 motorola rf device data package dimensions case 395cC01 issue a u d k n j h e c
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